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UNISONIC TECHNOLOGIES CO., LTD 5N60
4.5 Amps, 600/650 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1
Power MOSFET
1
TO-252
TO-251
1
TO-220
FEATURES
* RDS(ON) = 2.5 @VGS = 10 V * Ultra Low Gate Charge ( Typical 15 nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 6.5 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
1
TO-220F
SYMBOL
2.Drain
1
TO-220F1
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number Lead Free Halogen Free 5N60L-X-TA3-T 5N60G-x-TA3-T 5N60L-x-TF3-T 5N60G-x-TF3-T 5N60L-x-TF1-T 5N60G-x-TF1-T 5N60L-x-TM3-T 5N60G-x-TM3-T 5N60L-x-TN3-T 5N60G-x-TN3-T 5N60L-x-TN3-R 5N60G-x-TN3-R Package TO-220 TO-220F TO-220F1 TO-251 TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel
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5N60
ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise specified)
Power MOSFET
PARAMETER SYMBOL RATINGS UNIT 5N60-A 600 Drain-Source Voltage VDSS V 5N60-B 650 Gate-Source Voltage VGSS 30 V Avalanche Current (Note 2) IAR 4.5 A Continuous Drain Current ID 4.5 A Pulsed Drain Current (Note 2) IDM 18 A Single Pulsed (Note 3) EAS 210 mJ Avalanche Energy 10 Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 100 W PD Power Dissipation 36 TO-220F/TO-220F1 TO-251 / TO-252 54 C Junction Temperature TJ +150 C Operation Temperature TOPR -55 ~ +150 C Storage Temperature TSTG -55 ~ +150 Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by TJ(MAX) 3. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 , Starting TJ = 25C 4. ISD 4.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
THERMAL DATA
PARAMETER TO-220 Junction-to-Ambient TO-220F/TO-220F1 TO-251 / TO-252 TO-220 Junction-to-Case TO-220F/TO-220F1 TO-251 / TO-252 SYMBOL JA RATINGS 62.5 62.5 160 1.25 3.47 2.3 UNIT C/W
JC
C/W
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5N60
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise specified)
PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse 5N60-A 5N60-B SYMBOL BVDSS IDSS IGSS TEST CONDITIONS VGS =0V, ID = 250A VGS =0V, ID = 250A VDS =600V, VGS = 0V VGS =30V, VDS = 0V VGS =-30V, VDS = 0V
Power MOSFET
MIN TYP MAX UNIT 600 650 1 100 -100 0.6 2.0 2.0 515 55 6.5 10 42 38 46 15 2.5 6.6 4.0 2.5 670 72 8.5 30 90 85 100 19 V A nA V/C
Breakdown Voltage Temperature BVDSS/TJ ID =250A, Referenced to 25 Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS =VGS, ID = 250A Static Drain-Source On-State Resistance RDS(ON) VGS =10V, ID = 2.25A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1.0MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD = 300V, ID =4.5 A, RG = 25 (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS = 480 V, ID = 4.5A, Gate-Source Charge QGS VGS = 10 V (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 4.5 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 4.5 A, dIF / dt = 100 A/s (Note 1) Reverse Recovery Charge QRR Note 1. Pulse Test: Pulse width 300s, Duty cycle 2% 2. Essentially independent of operating temperature
V pF pF pF ns ns ns ns nC nC nC V A A ns C
1.4 4.5 18 300 2.2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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5N60
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
D.U.T.
+ VDS -
+ L
RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
VGS (Driver)
Period P.W.
D=
P. W. Period
VGS= 10V
IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt
Body Diode Recovery dv/dt VDS (D.U.T.) VDD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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www.unisonic.com.tw
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5N60
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L VDS BVDSS IAS RD VDD D.U.T. tp tp Time VDD
ID(t)
VDS(t)
10V
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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www.unisonic.com.tw
5 of 6 QW-R502-065,F
5N60
TYPICAL CHARACTERISTICS
Power MOSFET
Drain Current, ID (A)
Drain-Source On-Resistance, RDS(ON) ()
6 5
On-Resistance Variation vs. Drain Current and Gate Voltage
Drain Current, ID (A)
Maximum Safe Operating Area Operation in This Area is Limited by RDS(on) 10 Drain Current, ID (A)
1
100s 1ms
10 0m 10ms s
4 3 2 1 0
VGS=10V VGS=20V
100
DC *Notes: 1. TC=25 2. TJ=150 3. Single Pulse 101 102 Drain-Source Voltage, VDS (V) 103
10-1
*Note: TJ=25 0 2 4 6 Drain Current, ID (A) 8 10 10-2 0 10
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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